Samsung Electronics
Manufactures memory chips and mobile processors and runs a foundry business.
- Part of the chain
- Integrated device manufacturers
- Headquarters
- South Korea
- Listing
- KRX: 005930
- SEC CIK
- not recorded
- Links
- Company website · Investor relations
Filed figures
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Customers and suppliers, as its annual report states them
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Fabrication and packaging sites
9 site(s) recorded on the fab map: 6 operating, 2 under construction, 1 announced. Grouped by the status each site is published under, in the same order on every page. The order is not a judgement about which sites matter. A site run by a joint venture appears on every partner's page.
Operating 6
| Site | Location | Wafer | Nodes | First output |
|---|---|---|---|---|
| Xian NAND Fabs | Xian, China | 300 mm | V-NAND (up to 236-layer) | 2014 |
| Giheung Campus | Giheung, Yongin, South Korea | 300 mm | not recorded | not recorded |
| Hwaseong Campus | Hwaseong, South Korea | 300 mm | 7nm, 5nm, 4nm, 3nm GAA | not recorded |
| Pyeongtaek P1-P3 | Pyeongtaek, South Korea | 300 mm | V-NAND, DDR5 | 2017 |
| Pyeongtaek P4 | Pyeongtaek, South Korea | 300 mm | 1c DRAM, HBM4 | 2022 |
| Austin fab (S2) | Austin, Texas, United States | 300 mm | not recorded | 1998 |
Under construction 2
| Site | Location | Wafer | Nodes | First output |
|---|---|---|---|---|
| Pyeongtaek P5 | Pyeongtaek, South Korea | 300 mm | not recorded | not recorded |
| Taylor fab | Taylor, Texas, United States | 300 mm | 2nm-class | 2027 |
Announced 1
| Site | Location | Wafer | Nodes | First output |
|---|---|---|---|---|
| Onyang HBM packaging plant | Onyang, Asan, South Chungcheong, South Korea | not recorded | not recorded | not recorded |
Node bands
Nodes are recorded on 5 of the 9 sites here, so this is not a full picture of what the company runs. Which bands those nodes fall into, under each definition this record holds. A band is a publisher's statement on a date and not this record's classification: N7 was the leading edge when it arrived and is ordinary now, and nothing about the node changed. So the answer is computed against each definition and shown with the date of it.
7 value(s) on these sites are not a nanometre figure, so no scheme above places them: 1c DRAM, 2nm-class, 3nm GAA, DDR5, HBM4, V-NAND, V-NAND (up to 236-layer). These bands are stated in nanometres. A named process is a designation and not a dimension - N4 is not 4nm and Intel 18A is not 1.8nm - so translating one would put this record's inference inside a publisher's definition.
Published by Samsung
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Named in a headline
A literal text match on the company's name, counted and not curated. It misses items that discuss the company without naming it, and collects items that only mention the name. It is not a measure of coverage.
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How these lists are built
Published by the company. Published by the company itself, so these involve no matching at all. Source: Samsung Global Newsroom.
Matched on the company's name in the headline, counted and not curated. This is a literal text match: the name as written, or the same name in capitals, and nothing else. It is not a judgement about what an item is about, so it misses items that discuss the company without naming it, and collects items that only mention the name. It is not a measure of coverage. Strings matched: Samsung, Samsung Electronics.
Sites are joined by the operator string in the fab data, which is declared per operator rather than matched, because a third of those strings are not a company name.