What each fab makes.

188 fab sites in this record. 43 of them name a product, a material, a memory generation, a packaging technology or a device type, across 32 distinct published values. Those values are on this page. The geometries are on the nodes page.

Nothing in the right-hand column is estimated, inferred from a neighbouring site, or carried over from an earlier year. A site with no published wafer diameter has no wafer diameter here.

Who said so. Of the 43 sites on this page, 25 link to something the operator published itself. 15 link to a third party: trade press, a local newspaper, a national agency or an encyclopedia. 3 cannot be checked, because this record holds no web domain for that operator. Every row below says which of the three it is, and the check is a comparison of the link's domain against the domain this record holds for that company, so an operator publishing under a second domain reads as a third party until somebody declares it in data/operator-domains.json. That error runs one way only: it understates how much of this page came from the operators.

16 distinct published values across 18 sites.

3D NAND

4 sites in this record are described by the exact string “3D NAND”.

DDR5

2 sites in this record are described by the exact string “DDR5”.

DRAM

2 sites in this record are described by the exact string “DRAM”.

HBM

2 sites in this record are described by the exact string “HBM”.

NOR flash

2 sites in this record are described by the exact string “NOR flash”.

V-NAND

2 sites in this record are described by the exact string “V-NAND”.

10th-gen 3D flash (332-layer)

1 site in this record is described by the exact string “10th-gen 3D flash (332-layer)”.

3D NAND (Xtacking, up to 232-layer)

1 site in this record is described by the exact string “3D NAND (Xtacking, up to 232-layer)”.

BiCS8

1 site in this record is described by the exact string “BiCS8”.

DDR4

1 site in this record is described by the exact string “DDR4”.

HBM3E

1 site in this record is described by the exact string “HBM3E”.

HBM4

1 site in this record is described by the exact string “HBM4”.

LPDDR5

1 site in this record is described by the exact string “LPDDR5”.

NAND

1 site in this record is described by the exact string “NAND”.

NAND flash

1 site in this record is described by the exact string “NAND flash”.

V-NAND (up to 236-layer)

1 site in this record is described by the exact string “V-NAND (up to 236-layer)”.

6 distinct published values across 8 sites.

1-gamma DRAM

4 sites in this record are described by the exact string “1-gamma DRAM”.

1-beta DRAM

2 sites in this record are described by the exact string “1-beta DRAM”.

1-alpha DRAM

1 site in this record is described by the exact string “1-alpha DRAM”.

10nm-class DRAM

1 site in this record is described by the exact string “10nm-class DRAM”.

1B DRAM

1 site in this record is described by the exact string “1B DRAM”.

1c DRAM

1 site in this record is described by the exact string “1c DRAM”.

7 distinct published values across 18 sites.

SiC

13 sites in this record are described by the exact string “SiC”.

GaN

2 sites in this record are described by the exact string “GaN”.

200mm SiC

1 site in this record is described by the exact string “200mm SiC”.

SOI substrates

1 site in this record is described by the exact string “SOI substrates”.

Si

1 site in this record is described by the exact string “Si”.

SiC materials

1 site in this record is described by the exact string “SiC materials”.

glass substrate

1 site in this record is described by the exact string “glass substrate”.

2 distinct published values across 2 sites.

Foveros

2 sites in this record are described by the exact string “Foveros”.

EMIB

1 site in this record is described by the exact string “EMIB”.

1 distinct published value across 2 sites.

IGBT

2 sites in this record are described by the exact string “IGBT”.

15 pairs of values on this page sit inside one another, word for word. Every one of them is two operators, or the same operator in two releases, describing what is made at a different level of detail.

Merging them would give a shorter table and a count no publisher stated. The operators wrote different things, in different releases, on different dates, and one of them chose to name a layer count where the other did not. That difference is information. Every row here is the string as it was published, and the link beside it goes to the page it was published on, so a reader can see the wording for themselves.

The comparison above is made on whole words. A character-by-character one reads “Si” as sitting inside “SiC” and “DDR5” inside “LPDDR5”, which would put three relationships on this page that no publisher stated and that do not exist.

The same rule is why this page is not organised by the fab types on the fabs page. Those seven types are this record's own compilation. Everything on this page is a publisher's.