Which fabs fall in which band.
A fab holds the process nodes its operator said it runs. A publisher holds what it said the bands were, on a stated date. This page is those two put together, under each definition separately, with the date of the definition that drew it.
What can be placed at all
Counted from the same two files the tables below read. A site with no published node value is absent from every band here, which is a fact about what its operator publishes.
194 fab sites in this record. 95 list at least one process node. The rest publish none, and are not counted as anything.
| Definition | Bands | Sites placed | Node values the bands do not cover |
|---|---|---|---|
| SEMI, 2025-01-07 | 3 | 23 | 0 |
| SEMI, 2025-06-25 | 2 | 9 | 13 |
The two definitions place different numbers of sites because they define different things: the January wording covers the whole range in three bands, the June one reports only the advanced end. Neither is a subset of the other and they are not merged.
SEMI, 2025-01-07
As published in World Fab Forecast, SEMI press release, 7 January 2025, on a 200mm equivalent basis. The definition, with its citation.
Advanced
The publisher's own wording: “advanced nodes (7nm and below)”. 9 sites in this record run a node that falls inside it.
| Operator | Fab | Location | Country | Status | Nodes that placed it |
|---|---|---|---|---|---|
| JASM (TSMC / Sony / Denso / Toyota) | Kumamoto Fab 2 | Kikuyo, Kumamoto | JP | construction | 4nm, 6nm |
| Rapidus | IIM-1 | Chitose, Hokkaido | JP | construction | 2nm |
| Samsung Electronics | Hwaseong Campus | Hwaseong | KR | operating | 4nm, 5nm, 7nm |
| TSMC | Fab 12 | Hsinchu Science Park | TW | operating | 7nm |
| TSMC | Fab 15 | Central Taiwan Science Park, Taichung | TW | operating | 7nm |
| TSMC | Fab 18 | Southern Taiwan Science Park, Tainan | TW | operating | 3nm, 5nm |
| TSMC | Fab 20 | Baoshan, Hsinchu Science Park | TW | operating | 2nm |
| TSMC | Fab 22 | Kaohsiung (Qiaotou) Science Park | TW | operating | 2nm |
| TSMC | Fab 25 (new advanced fab) | Central Taiwan Science Park, Taichung | TW | construction | 2nm |
Mainstream
The publisher's own wording: “mainstream nodes (8nm~45nm)”. 13 sites in this record run a node that falls inside it.
| Operator | Fab | Location | Country | Status | Nodes that placed it |
|---|---|---|---|---|---|
| Hua Hong Semiconductor | Wuxi Fab (Hua Hong 7 / Fab 9) | Wuxi | CN | operating | 40nm |
| Intel | Fab 28 | Kiryat Gat | IL | operating | 14nm |
| JASM (TSMC / Sony / Denso / Toyota) | Kumamoto Fab 1 | Kikuyo, Kumamoto | JP | operating | 12nm, 16nm, 22nm, 28nm |
| Nexchip Semiconductor | Hefei Fab | Hefei | CN | operating | 28nm, 40nm |
| Powerchip Semiconductor Manufacturing Corp (PSMC) | P1-P3 Fabs | Chiayi | TW | operating | 40nm |
| SMIC | Beijing Mega-fab (SMIC Beijing/SMIC12) | Yizhuang, Beijing | CN | operating | 14nm, 28nm |
| SMIC | Shanghai (Zhangjiang) Fabs | Shanghai | CN | operating | 14nm, 28nm |
| TSMC | Fab 12 | Hsinchu Science Park | TW | operating | 10nm, 16nm, 28nm, 40nm |
| TSMC | Fab 14 | Southern Taiwan Science Park, Tainan | TW | operating | 28nm, 40nm |
| TSMC | Fab 15 | Central Taiwan Science Park, Taichung | TW | operating | 16nm, 20nm, 28nm, 40nm |
| UMC | Fab 12A | Tainan Science Park | TW | operating | 14nm, 22nm, 28nm, 40nm |
| UMC | Fab 12i | Pasir Ris Wafer Fab Park | SG | operating | 22nm, 28nm |
| UMC (United Semiconductor Xiamen / USCXM) | Xiamen Fab | Xiamen, Fujian | CN | operating | 28nm, 40nm |
Mature
The publisher's own wording: “mature technology nodes (50nm and above)”. 7 sites in this record run a node that falls inside it.
| Operator | Fab | Location | Country | Status | Nodes that placed it |
|---|---|---|---|---|---|
| Hua Hong Semiconductor | Wuxi Fab (Hua Hong 7 / Fab 9) | Wuxi | CN | operating | 55nm |
| Hua Hong Semiconductor (Hua Hong Grace) | Shanghai Fabs 1-3 | Shanghai | CN | operating | 65nm, 90nm |
| Nexchip Semiconductor | Hefei Fab | Hefei | CN | operating | 55nm |
| Powerchip Semiconductor Manufacturing Corp (PSMC) | P1-P3 Fabs | Chiayi | TW | operating | 55nm |
| TSMC | Fab 14 | Southern Taiwan Science Park, Tainan | TW | operating | 65nm, 90nm, 130nm |
| Tata Electronics | Dholera Fab | Dholera, Gujarat | IN | operating | 90nm |
| UMC | Fab 8AB | Hsinchu Science Park | TW | operating | 90nm, 0.13um |
SEMI, 2025-06-25
As published in 300mm Fab Outlook, SEMI press release, 25 June 2025, on a 300mm actual basis. The definition, with its citation.
2nm and below
The publisher's own wording: “2nm and below”. 4 sites in this record run a node that falls inside it.
| Operator | Fab | Location | Country | Status | Nodes that placed it |
|---|---|---|---|---|---|
| Rapidus | IIM-1 | Chitose, Hokkaido | JP | construction | 2nm |
| TSMC | Fab 20 | Baoshan, Hsinchu Science Park | TW | operating | 2nm |
| TSMC | Fab 22 | Kaohsiung (Qiaotou) Science Park | TW | operating | 2nm |
| TSMC | Fab 25 (new advanced fab) | Central Taiwan Science Park, Taichung | TW | construction | 2nm |
Advanced
The publisher's own wording: “7nm and below”. 9 sites in this record run a node that falls inside it.
| Operator | Fab | Location | Country | Status | Nodes that placed it |
|---|---|---|---|---|---|
| JASM (TSMC / Sony / Denso / Toyota) | Kumamoto Fab 2 | Kikuyo, Kumamoto | JP | construction | 4nm, 6nm |
| Rapidus | IIM-1 | Chitose, Hokkaido | JP | construction | 2nm |
| Samsung Electronics | Hwaseong Campus | Hwaseong | KR | operating | 4nm, 5nm, 7nm |
| TSMC | Fab 12 | Hsinchu Science Park | TW | operating | 7nm |
| TSMC | Fab 15 | Central Taiwan Science Park, Taichung | TW | operating | 7nm |
| TSMC | Fab 18 | Southern Taiwan Science Park, Tainan | TW | operating | 3nm, 5nm |
| TSMC | Fab 20 | Baoshan, Hsinchu Science Park | TW | operating | 2nm |
| TSMC | Fab 22 | Kaohsiung (Qiaotou) Science Park | TW | operating | 2nm |
| TSMC | Fab 25 (new advanced fab) | Central Taiwan Science Park, Taichung | TW | construction | 2nm |
Not covered by this definition's own bands: 10nm, 12nm, 14nm, 16nm, 20nm, 22nm, 28nm, 40nm, 55nm, 65nm, 90nm, 130nm, 0.13um. These are real nanometre figures that fall outside every band this publisher named on this date. They are reported as unclassified by this definition rather than moved into whichever band is nearest.
What cannot be placed, and why
Every node value in this record that no band can take, with the reason. This is the larger half of the industry and it is here rather than in a footnote.
| Node values | Why no band takes them |
|---|---|
| 100, 1000, 110, 130, 140, 150, 1500, 180, 22, 250, 32, 350, 3500, 40, 45, 50, 500, 55, 600, 65, 70, 800, 90 | A number with no unit. Nanometres is the obvious reading and this record does not band on an obvious reading; the fab row should carry the unit. |
| 10th-gen 3D flash (332-layer), 3D NAND, 3D NAND (Xtacking, up to 232-layer), BiCS8, DDR4, DDR5, DRAM, HBM, HBM3E, HBM4, LPDDR5, NAND, NAND flash, NOR flash, V-NAND, V-NAND (up to 236-layer) | A memory product or family, not a process node. |
| 3nm GAA, A16, Intel 14A, Intel 18A, Intel 20A, Intel 3, Intel 4, N3, N4, N5 | A named process. The number in the name is a marketing designation and not a measured dimension, so it is NOT translated into nanometres here: SEMI's bands are stated in nanometres, and turning 'N4' or 'Intel 18A' into a figure would be this record's inference, not a publisher's statement. |
| 200mm SiC, GaN, SOI substrates, Si, SiC, SiC materials, glass substrate | A material, not a process node. SiC and GaN fabs are described by what they process. |
| 1-alpha DRAM, 1-beta DRAM, 1-gamma DRAM, 10nm-class DRAM, 1B DRAM, 1c DRAM | A DRAM or flash generation. Makers publish these instead of a nanometre figure, on purpose: '1-gamma' names a generation and no dimension. |
| 22/28nm-class, 28nm and above, 2nm-class | Names a node loosely - a class, a range, or an open end. There is no single nanometre figure to band. |
| EMIB, Foveros | A packaging or interconnect technology. |
| High-NA EUV | A LITHOGRAPHY TOOL, which is not a node at all and should not be in a nodes list. Recorded here so the vocabulary is honest about it; the fab row is the thing to fix. |
| IGBT | A device type. |
The largest group is this record's own gap, not the industry's. 23 of the 69 values here are bare numbers with no unit. Nanometres is the obvious reading, and this record does not band on an obvious reading, so those sites sit in no band until the fab row states the unit.
The rest are the industry's own vocabulary, and the process names are the ones most often mistaken for figures. A modern process name is a designation and not a measured dimension: N4 is not 4nm and Intel 18A is not 1.8nm. Translating one into nanometres would put this record's inference inside a publisher's definition, so it is not done, and the fab appears in no band under either scheme.