Xian NAND Fabs
Samsung Electronics, Xian, China. Every field this record holds on the site, its note and every source, as the row states them.
The row
- Operator
- Samsung Electronics · company page: Samsung Electronics
- Site
- Xian NAND Fabs
- Location
- Xian, China
- Type
- memory
- Status
- operating
- Wafer
- 300 mm
- Nodes
- V-NAND (up to 236-layer)
- First output
- 2014
- Announced investment
- not recorded
- Map position
- 34.27, 108.95, on the map
TrendForce reported in 2026 that the site is moving to 236-layer V-NAND, with output dipping 5-6% during the conversion.
Sources
1 source on this row, in the order the row lists them. The order carries no weight.
Samsung Reportedly Advances Xi'an to 236-Layer NAND - TrendForce · trendforce.com
Capacity statements
No published capacity statement names this site. Blank is unpublished, not zero.
On this record
What this record changed on this row, newest first. Each day is the day this record changed, never the day a publisher said it. Followed: status, first output year, announced investment, operator, name, site and sources.
2026-08-13 · The row entered this record, with the status operating. · Source at entry: Samsung Reportedly Advances Xi'an to 236-Layer NAND - TrendForce
None of the fields followed here has changed since the row entered this record on 2026-08-13.