Data · Fab
Xian NAND Fabs
Samsung Electronics, Xian, China. Every field this record holds on the site, its note and every source, as the row states them.
Every figure links to its publisher
What changed, and when →
01
The row
- Operator
- Samsung Electronics · company page: Samsung Electronics
- Site
- Xian NAND Fabs
- Location
- Xian, China
- Type
- memory
- Status
- operating
- Wafer
- 300 mm
- Nodes
- V-NAND (up to 236-layer)
- First output
- 2014
- Announced investment
- not recorded
- Map position
- 34.27, 108.95, on the map
Reportedly shifting production toward 236-layer V-NAND during 2026; output temporarily dipped 5-6% amid the layer-count conversion.
02
Sources
1 source on this row, in the order the row lists them. The order carries no weight.
Samsung Reportedly Advances Xi'an to 236-Layer NAND - TrendForce · trendforce.com
03
Capacity statements
No published capacity statement names this site. Blank is unpublished, not zero.