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Hiroshima Fab Expansion

Micron, Higashihiroshima, Hiroshima, Japan. Every field this record holds on the site, its note and every source, as the row states them.

Every figure links to its publisher What changed, and when →
01

The row

Operator
Micron · company page: Micron Technology
Site
Hiroshima Fab Expansion
Location
Higashihiroshima, Hiroshima, Japan
Type
memory
Status
construction
Wafer
300 mm
Nodes
1-gamma DRAM, HBM
First output
not recorded
Announced investment
USD 9.3 billion
Map position
34.4, 132.47, on the map

Groundbreaking July 2026 for expansion bringing EUV lithography to Japan for the first time; equipment move-in targeted for 2H 2028.

02

Sources

1 source on this row, in the order the row lists them. The order carries no weight.

Micron Breaks Ground on Hiroshima Fab Expansion - TrendForce · trendforce.com

03

Capacity statements

No published capacity statement names this site. Blank is unpublished, not zero.

04

On this record

What this record changed on this row, newest first. Each day is the day this record changed, never the day a publisher said it. Followed: status, first output year, announced investment, operator, name, site and sources.

2026-08-13 · The row entered this record, with the status construction. · Source at entry: Micron Breaks Ground on Hiroshima Fab Expansion - TrendForce

None of the fields followed here has changed since the row entered this record on 2026-08-13.

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