Data · Fab
Boise leading-edge fab
Micron, Boise, Idaho, United States. Every field this record holds on the site, its note and every source, as the row states them.
Every figure links to its publisher
What changed, and when →
01
The row
- Operator
- Micron · company page: Micron Technology
- Site
- Boise leading-edge fab
- Location
- Boise, Idaho, United States
- Type
- memory
- Status
- operating
- Wafer
- 300 mm
- Nodes
- 1-gamma DRAM
- First output
- 2024
- Announced investment
- USD 15 billion
- Map position
- 43.61, -116.2, on the map
Micron's first US leading-edge DRAM fab in 20 years.
02
Sources
1 source on this row, in the order the row lists them. The order carries no weight.
Idaho - Micron Technology Inc. · micron.com
03
Capacity statements
No published capacity statement names this site. Blank is unpublished, not zero.