Fab 5A
Nanya Technology, Taoyuan, Taiwan. Every field this record holds on the site, its note and every source, as the row states them.
The row
- Operator
- Nanya Technology · company page: Nanya Technology
- Site
- Fab 5A
- Location
- Taoyuan, Taiwan
- Type
- memory
- Status
- construction
- Wafer
- 300 mm
- Nodes
- 10nm-class DRAM
- First output
- not recorded
- Announced investment
- USD 10.7 billion
- Map position
- 24.99, 121.3, on the map
Investment plan through 2029 targeting 10nm-class DRAM with EUV, unveiled August 2026.
Sources
1 source on this row, in the order the row lists them. The order carries no weight.
Nanya Tech Unveils Up to US$10.7B Fab 5A Investment Plan Through 2029 - TrendForce · trendforce.com
Capacity statements
No published capacity statement names this site. Blank is unpublished, not zero.
On this record
What this record changed on this row, newest first. Each day is the day this record changed, never the day a publisher said it. Followed: status, first output year, announced investment, operator, name, site and sources.
2026-08-13 · The row entered this record, with the status construction. · Source at entry: Nanya Tech Unveils Up to US$10.7B Fab 5A Investment Plan Through 2029 - TrendForce
None of the fields followed here has changed since the row entered this record on 2026-08-13.